ME7345-G Specs and Replacement
Type Designator: ME7345-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: POWERDFN5X6
ME7345-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7345-G datasheet
me7345-g.pdf
ME7345-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7345-G is the P-Channel logic enhancement mode power RDS(ON) 15m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) ... See More ⇒
Detailed specifications: ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S, ME7232S-G, ME7306-G, 5N65, ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607
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