All MOSFET. ME7345-G Datasheet

 

ME7345-G Datasheet and Replacement


   Type Designator: ME7345-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERDFN5X6
 

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ME7345-G Datasheet (PDF)

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ME7345-G

ME7345-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7345-G is the P-Channel logic enhancement mode power RDS(ON)15m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , ME7232S-G , ME7306-G , 4435 , ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , ME7607 .

History: QM2403J | IXTA88N085T | AP3A010MT | HGN023NE6AL | DH300P06E | AP4530GH | RSR025P03FRA

Keywords - ME7345-G MOSFET datasheet

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