All MOSFET. ME7345-G Datasheet

 

ME7345-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7345-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92.6 nC
   trⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERDFN5X6

 ME7345-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7345-G Datasheet (PDF)

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 me7345-g.pdf

ME7345-G ME7345-G

ME7345-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7345-G is the P-Channel logic enhancement mode power RDS(ON)15m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FHP7N65A

 

 
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