All MOSFET. ME7345-G Datasheet

 

ME7345-G Datasheet and Replacement


   Type Designator: ME7345-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERDFN5X6
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ME7345-G Datasheet (PDF)

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ME7345-G

ME7345-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7345-G is the P-Channel logic enhancement mode power RDS(ON)15m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFN44N50Q | S70N08S | IRFIZ34N | 2SK3355-S | IXFH110N10P | RSE002P03TL | IXFH12N100P

Keywords - ME7345-G MOSFET datasheet

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