All MOSFET. ME7356-G Datasheet

 

ME7356-G Datasheet and Replacement


   Type Designator: ME7356-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 353 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: POWERDFN5X6
 

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ME7356-G Datasheet (PDF)

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ME7356-G

ME7356-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7356-G is the N-Channel logic enhancement mode power RDS(ON)3.8m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)6.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , IRF530 , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , ME7607-G .

History: PT542BA | NTB5426NT4G | IXFR200N10P | AM6968N | AM7363P | ME7362 | OSG60R180FSF-NB

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