ME7356-G Specs and Replacement

Type Designator: ME7356-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 353 nS

Cossⓘ - Output Capacitance: 311 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: POWERDFN5X6

ME7356-G substitution

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ME7356-G datasheet

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ME7356-G

ME7356-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7356-G is the N-Channel logic enhancement mode power RDS(ON) 3.8m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 6.2m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) ... See More ⇒

Detailed specifications: ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S, ME7232S-G, ME7306-G, ME7345-G, IRF1010E, ME7362, ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G

Keywords - ME7356-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.