All MOSFET. ME7356-G Datasheet

 

ME7356-G Datasheet and Replacement


   Type Designator: ME7356-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 353 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: POWERDFN5X6
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ME7356-G Datasheet (PDF)

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ME7356-G

ME7356-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7356-G is the N-Channel logic enhancement mode power RDS(ON)3.8m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)6.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM7N65 | SVGP20110NSTR | 2SK3203 | MXP4004AT | IXTC200N075T | WSD2050DN | MEE42942-G

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