All MOSFET. ME7362-G Datasheet

 

ME7362-G Datasheet and Replacement


   Type Designator: ME7362-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.4 nS
   Cossⓘ - Output Capacitance: 1051 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: POWERDFN5X6
 

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ME7362-G Datasheet (PDF)

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ME7362-G

ME7362/ME7362-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7362 is the N-Channel logic enhancement mode power field RDS(ON)2 m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)3 m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME7232 , ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 , IRLZ44N , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G .

Keywords - ME7362-G MOSFET datasheet

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