ME7423S-G Specs and Replacement
Type Designator: ME7423S-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN3X3
ME7423S-G substitution
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ME7423S-G datasheet
me7423s-g.pdf
ME7423S-G P-Channel Enhancement Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 13m @VGS=-10V The ME7423 P-Channel logic enhancement mode power field effect RDS(ON) 17m @ VGS=-4.5V transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular... See More ⇒
me7423s-g.pdf
ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m @ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly... See More ⇒
Detailed specifications: ME7232-G, ME7232S, ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, IRF530, ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632
Keywords - ME7423S-G MOSFET specs
ME7423S-G cross reference
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ME7423S-G replacement
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