All MOSFET. ME7423S-G Datasheet

 

ME7423S-G Datasheet and Replacement


   Type Designator: ME7423S-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 42.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3
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ME7423S-G Datasheet (PDF)

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ME7423S-G

ME7423S-G P-Channel Enhancement Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-10V The ME7423 P-Channel logic enhancement mode power field effect RDS(ON) 17m@ VGS=-4.5V transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular

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ME7423S-G

ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 7N80G-TF3-T | SVGP20110NSTR | FQD11P06TM | MXP4004AT | ME7232 | HUFA75823D3S | MEE42942-G

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