All MOSFET. ME7423S-G Datasheet

 

ME7423S-G Datasheet and Replacement


   Type Designator: ME7423S-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3
 

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ME7423S-G Datasheet (PDF)

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ME7423S-G

ME7423S-G P-Channel Enhancement Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-10V The ME7423 P-Channel logic enhancement mode power field effect RDS(ON) 17m@ VGS=-4.5V transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular

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ME7423S-G

ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Datasheet: ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G , STP80NF70 , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G , ME7632 .

History: JCS7HN65V | OSG60R028HT3F | SWP090R08ET | IXTP80N075L2 | ELM13413CA | HM3414

Keywords - ME7423S-G MOSFET datasheet

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