ME7423S-G Datasheet and Replacement
Type Designator: ME7423S-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN3X3
ME7423S-G substitution
ME7423S-G Datasheet (PDF)
me7423s-g.pdf

ME7423S-G P-Channel Enhancement Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-10V The ME7423 P-Channel logic enhancement mode power field effect RDS(ON) 17m@ VGS=-4.5V transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular
me7423s-g.pdf

ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
Datasheet: ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G , AO4407 , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G , ME7632 .
History: SDF044JAA-U | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S
Keywords - ME7423S-G MOSFET datasheet
ME7423S-G cross reference
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ME7423S-G replacement
History: SDF044JAA-U | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S



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