ME7442D-G Specs and Replacement
Type Designator: ME7442D-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 101 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 676 nS
Cossⓘ - Output Capacitance: 0.0023 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: DFN3.3X3.3
ME7442D-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7442D-G datasheet
me7442d-g.pdf
Preliminary-ME7442D-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7442D-G is the N-Channel logic enhancement mode power RDS(ON) 2.3 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.5 m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protection minimize on-state resistance.... See More ⇒
Detailed specifications: ME7232S, ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G, CS150N03A8, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632, ME7632-G
Keywords - ME7442D-G MOSFET specs
ME7442D-G cross reference
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ME7442D-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
