All MOSFET. ME7442D-G Datasheet

 

ME7442D-G Datasheet and Replacement


   Type Designator: ME7442D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 676 nS
   Cossⓘ - Output Capacitance: 0.0023 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: DFN3.3X3.3
 

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ME7442D-G Datasheet (PDF)

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ME7442D-G

Preliminary-ME7442D-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7442D-G is the N-Channel logic enhancement mode power RDS(ON)2.3 m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.5 m @VGS=4.5Vtrench technology. This high density process is especially tailored to ESD Protectionminimize on-state resistance.

Datasheet: ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G , ME7423S-G , CS150N03A8 , ME75N03 , ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G , ME7632 , ME7632-G .

History: ME75N03 | ME7345-G | ME7423S-G | AM50N10-18D | AP5N04MI | GSM3050S | GSM4172WS

Keywords - ME7442D-G MOSFET datasheet

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