All MOSFET. ME7442D-G Datasheet

 

ME7442D-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7442D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 73 V
   |Id|ⓘ - Maximum Drain Current: 101 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 73 nC
   trⓘ - Rise Time: 676 nS
   Cossⓘ - Output Capacitance: 0.0023 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: DFN3.3X3.3

 ME7442D-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7442D-G Datasheet (PDF)

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 me7442d-g.pdf

ME7442D-G ME7442D-G

Preliminary-ME7442D-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7442D-G is the N-Channel logic enhancement mode power RDS(ON)2.3 m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.5 m @VGS=4.5Vtrench technology. This high density process is especially tailored to ESD Protectionminimize on-state resistance.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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