All MOSFET. ME75N03-G Datasheet

 

ME75N03-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME75N03-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 393 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO252

 ME75N03-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME75N03-G Datasheet (PDF)

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 me75n03 me75n03-g.pdf

ME75N03-G ME75N03-G

ME75N03/ME75N03-G 30V N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5.2m@VGS=10V The ME75N03 is the N-Channel logic enhancement mode power RDS(ON)8m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espe

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