All MOSFET. ME7607-G Datasheet

 

ME7607-G Datasheet and Replacement


   Type Designator: ME7607-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 652 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWERDFN5X6
 

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ME7607-G Datasheet (PDF)

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ME7607-G

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME7607 is the P-Channel logic enhancement mode power field RDS(ON)6m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)9m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design

Datasheet: ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , IRF1407 , ME7620 , ME7620-G , ME7632 , ME7632-G , ME7632S , ME7632S-G , ME7636 , ME7636-G .

History: HGT035N12S | OSG60R030HT3ZF | NDH831N | 2P771A | MTN8N60FP | HGT019N08A | NDH834P

Keywords - ME7607-G MOSFET datasheet

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