ME7607-G Specs and Replacement
Type Designator: ME7607-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 164 nS
Cossⓘ - Output Capacitance: 652 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: POWERDFN5X6
ME7607-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7607-G datasheet
me7607 me7607-g.pdf
ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME7607 is the P-Channel logic enhancement mode power field RDS(ON) 6m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 9m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design... See More ⇒
Detailed specifications: ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607, IRFP450, ME7620, ME7620-G, ME7632, ME7632-G, ME7632S, ME7632S-G, ME7636, ME7636-G
Keywords - ME7607-G MOSFET specs
ME7607-G cross reference
ME7607-G equivalent finder
ME7607-G pdf lookup
ME7607-G substitution
ME7607-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
