ME7620-G Specs and Replacement

Type Designator: ME7620-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 127 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.9 nS

Cossⓘ - Output Capacitance: 741 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: POWERDFN5X6

ME7620-G substitution

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ME7620-G datasheet

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ME7620-G

ME7620/ME7620-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7620-G is the N-Channel logic enhancement mode power RDS(ON) 2.2 m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 2.4 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 3.0 m @VGS=2.5V minimize on-state res... See More ⇒

Detailed specifications: ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, AO4407, ME7632, ME7632-G, ME7632S, ME7632S-G, ME7636, ME7636-G, ME7640, ME7640-G

Keywords - ME7620-G MOSFET specs

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