All MOSFET. ME7620-G Datasheet

 

ME7620-G Datasheet and Replacement


   Type Designator: ME7620-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 127 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.9 nS
   Cossⓘ - Output Capacitance: 741 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: POWERDFN5X6
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ME7620-G Datasheet (PDF)

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ME7620-G

ME7620/ME7620-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7620-G is the N-Channel logic enhancement mode power RDS(ON)2.2 m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)2.4 m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)3.0 m@VGS=2.5V minimize on-state res

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History: ME7607 | IXFL39N90 | WMB35P04T1 | FQPF44N08T | RZR040P01 | ME8029 | IXFN40N90P

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