ME7686 Specs and Replacement
Type Designator: ME7686
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 128 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: POWERDFN5X6
ME7686 substitution
- MOSFET ⓘ Cross-Reference Search
ME7686 datasheet
me7686 me7686-g.pdf
ME7686/ME7686-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7686-G is the N-Channel logic enhancement mode power RDS(ON) 10.5m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 18m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre... See More ⇒
Detailed specifications: ME7642, ME7642-G, ME7644, ME7644-G, ME7648, ME7648-G, ME7648S, ME7648S-G, 2N60, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, ME7732-G, ME7802S-G, ME7805S
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