All MOSFET. ME7707-G Datasheet

 

ME7707-G Datasheet and Replacement


   Type Designator: ME7707-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44.9 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERDFN5X6
 

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ME7707-G Datasheet (PDF)

 ..1. Size:936K  matsuki electric
 me7707 me7707-g.pdf pdf_icon

ME7707-G

ME7707/ME7707-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7707 is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely

 9.1. Size:933K  matsuki electric
 me7705 me7705-g.pdf pdf_icon

ME7707-G

ME7705/ME7705-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7705 is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely lo

Datasheet: ME7648-G , ME7648S , ME7648S-G , ME7686 , ME7686-G , ME7705 , ME7705-G , ME7707 , IRF730 , ME7732-G , ME7802S-G , ME7805S , ME7805S-G , ME7807S , ME7807S-G , ME78101S-G , ME7810S-G .

History: FQD4P40TM | AON6242 | BUK98180-100A | KRLML6401 | ELM5B801QA | AON6266 | FC8V22280L

Keywords - ME7707-G MOSFET datasheet

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