All MOSFET. ME7732-G Datasheet

 

ME7732-G Datasheet and Replacement


   Type Designator: ME7732-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50.8 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: POWERDFN5X6
 

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ME7732-G Datasheet (PDF)

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ME7732-G

ME7732-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5.5 m@VGS=10VThe ME7732-G is the N-Channel logic enhancement mode power RDS(ON)8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to Exceptio

Datasheet: ME7648S , ME7648S-G , ME7686 , ME7686-G , ME7705 , ME7705-G , ME7707 , ME7707-G , IRF1405 , ME7802S-G , ME7805S , ME7805S-G , ME7807S , ME7807S-G , ME78101S-G , ME7810S-G , ME7820S-G .

History: RJL5018DPK | RSS125N03TB | 2SK2900-01 | IRF4435TR | ME7707-G | CEP01N6G | STW16NK60Z

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