ME7732-G Specs and Replacement
Type Designator: ME7732-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50.8 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERDFN5X6
ME7732-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7732-G datasheet
me7732-g.pdf
ME7732-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.5 m @VGS=10V The ME7732-G is the N-Channel logic enhancement mode power RDS(ON) 8 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptio... See More ⇒
Detailed specifications: ME7648S, ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, STP65NF06, ME7802S-G, ME7805S, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
