All MOSFET. ME78101S-G Datasheet

 

ME78101S-G Datasheet and Replacement


   Type Designator: ME78101S-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN3X3
 

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ME78101S-G Datasheet (PDF)

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ME78101S-G

ME78101S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME78101S-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)6m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

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ME78101S-G

ME7810S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7810S-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)6m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)minim

Datasheet: ME7707 , ME7707-G , ME7732-G , ME7802S-G , ME7805S , ME7805S-G , ME7807S , ME7807S-G , IRLB3034 , ME7810S-G , ME7820S-G , ME78241S-G , ME7845S , ME7845S-G , ME7890ED , ME7890ED-G , ME7900EN .

Keywords - ME78101S-G MOSFET datasheet

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