ME78101S-G Specs and Replacement

Type Designator: ME78101S-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 358 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN3X3

ME78101S-G substitution

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ME78101S-G datasheet

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ME78101S-G

ME78101S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME78101S-G is the N-Channel logic enhancement mode power RDS(ON) 4m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 6m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

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ME78101S-G

ME7810S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7810S-G is the N-Channel logic enhancement mode power RDS(ON) 4m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 6m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) minim... See More ⇒

Detailed specifications: ME7707, ME7707-G, ME7732-G, ME7802S-G, ME7805S, ME7805S-G, ME7807S, ME7807S-G, IRLB3034, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN

Keywords - ME78101S-G MOSFET specs

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