ME78241S-G Specs and Replacement

Type Designator: ME78241S-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 361 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DFN3X3

ME78241S-G substitution

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ME78241S-G datasheet

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ME78241S-G

ME78241S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME78241S-G is the N-Channel logic enhancement mode power RDS(ON) 3m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 4.2m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) m... See More ⇒

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ME78241S-G

ME7820S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7820S-G is the N-Channel logic enhancement mode power RDS(ON) 3.5m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 5.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) m... See More ⇒

Detailed specifications: ME7802S-G, ME7805S, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, AON7403, ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G

Keywords - ME78241S-G MOSFET specs

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