ME78241S-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME78241S-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 76 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 361 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN3X3
ME78241S-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME78241S-G Datasheet (PDF)
me78241s-g.pdf
ME78241S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME78241S-G is the N-Channel logic enhancement mode power RDS(ON)3m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)4.2m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m
me7820s-g.pdf
ME7820S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7820S-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m
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