ME7845S-G Specs and Replacement

Type Designator: ME7845S-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

Qg ⓘ - Total Gate Charge: 56 nC

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 507 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN3X3

ME7845S-G substitution

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ME7845S-G datasheet

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ME7845S-G

Preliminary-ME7845S/ME7845S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7845S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-4.5V effect transistors are produced using high cell density , DMOS trench RDS(ON) 10m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 17m @VGS=-1.8V minimize o... See More ⇒

Detailed specifications: ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S, EMB04N03H, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G, ME8029, ME8029-G

Keywords - ME7845S-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.