All MOSFET. ME7845S-G Datasheet

 

ME7845S-G Datasheet and Replacement


   Type Designator: ME7845S-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 507 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN3X3
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ME7845S-G Datasheet (PDF)

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ME7845S-G

Preliminary-ME7845S/ME7845S-G P-Channel 20V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7845S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-4.5Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 10m@VGS=-2.5Vtechnology. This high density process is especially tailored to RDS(ON) 17m@VGS=-1.8Vminimize o

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