ME7890ED MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7890ED
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 22.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57.6 nC
trⓘ - Rise Time: 260 nS
Cossⓘ - Output Capacitance: 339 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: DFN3X3
ME7890ED Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7890ED Datasheet (PDF)
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me7890ed me7890ed-g.pdf
me7890ed me7890ed-g.pdf
ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME7890ED-G is the N-Channel logic enhancement mode power RDS(ON)4.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)7.8m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design fo
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