ME7890ED Datasheet and Replacement
Type Designator: ME7890ED
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 22.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 260 nS
Cossⓘ - Output Capacitance: 339 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: DFN3X3
ME7890ED substitution
ME7890ED Datasheet (PDF)
me7890ed me7890ed-g.pdf

ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME7890ED-G is the N-Channel logic enhancement mode power RDS(ON)4.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)7.8m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design fo
Datasheet: ME7807S , ME7807S-G , ME78101S-G , ME7810S-G , ME7820S-G , ME78241S-G , ME7845S , ME7845S-G , MMD60R360PRH , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D , ME7910D-G , ME8029 , ME8029-G , ME80N08AF .
History: RFL2N06 | ME7890ED-G | PJW4N06A-AU | IXFN280N085 | KMB030N30D | FDD8580-6 | IRFI9634GPBF
Keywords - ME7890ED MOSFET datasheet
ME7890ED cross reference
ME7890ED equivalent finder
ME7890ED lookup
ME7890ED substitution
ME7890ED replacement
History: RFL2N06 | ME7890ED-G | PJW4N06A-AU | IXFN280N085 | KMB030N30D | FDD8580-6 | IRFI9634GPBF



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
13009 transistor | irf3205 equivalent | ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40