ME7890ED MOSFET. Datasheet pdf. Equivalent

   Type Designator: ME7890ED
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 22.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57.6 nC
   trⓘ - Rise Time: 260 nS
   Cossⓘ - Output Capacitance: 339 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DFN3X3

ME7890ED Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS