ME7890ED-G Specs and Replacement

Type Designator: ME7890ED-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 22.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 57.6 nC

tr ⓘ - Rise Time: 260 nS

Cossⓘ - Output Capacitance: 339 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: DFN3X3

ME7890ED-G substitution

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ME7890ED-G datasheet

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ME7890ED-G

ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME7890ED-G is the N-Channel logic enhancement mode power RDS(ON) 4.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 7.8m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design fo... See More ⇒

Detailed specifications: ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S, ME7845S-G, ME7890ED, MMIS60R580P, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G

Keywords - ME7890ED-G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs