All MOSFET. ME7890ED-G Datasheet

 

ME7890ED-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7890ED-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 22.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57.6 nC
   trⓘ - Rise Time: 260 nS
   Cossⓘ - Output Capacitance: 339 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DFN3X3

 ME7890ED-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7890ED-G Datasheet (PDF)

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 me7890ed me7890ed-g.pdf

ME7890ED-G ME7890ED-G

ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME7890ED-G is the N-Channel logic enhancement mode power RDS(ON)4.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)7.8m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design fo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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