All MOSFET. ME7890ED-G Datasheet

 

ME7890ED-G Datasheet and Replacement


   Type Designator: ME7890ED-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 22.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 260 nS
   Cossⓘ - Output Capacitance: 339 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DFN3X3
 

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ME7890ED-G Datasheet (PDF)

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ME7890ED-G

ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME7890ED-G is the N-Channel logic enhancement mode power RDS(ON)4.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)7.8m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design fo

Datasheet: ME7807S-G , ME78101S-G , ME7810S-G , ME7820S-G , ME78241S-G , ME7845S , ME7845S-G , ME7890ED , 2N7002 , ME7900EN , ME7900EN-G , ME7910D , ME7910D-G , ME8029 , ME8029-G , ME80N08AF , ME80N08AF-G .

History: CEB840A | AON6242 | BSC035N04LSG | KRLML6401 | ELM5B801QA | AON6266 | AP4961GM

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