All MOSFET. ME7900EN Datasheet

 

ME7900EN MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7900EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 472 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3X3NEP

 ME7900EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7900EN Datasheet (PDF)

 ..1. Size:1230K  matsuki electric
 me7900en me7900en-g.pdf

ME7900EN ME7900EN

ME7900EN/ME7900EN-G N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7900EN is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON)23m@VGS=4V trench technology . This high density process is especially tailored to RDS(ON)25m@VGS=3.1V mini

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDMA2002NZ | IRFN044

 

 
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