ME7900EN Specs and Replacement

Type Designator: ME7900EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

Qg ⓘ - Total Gate Charge: 11 nC

tr ⓘ - Rise Time: 472 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DFN3X3NEP

ME7900EN substitution

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ME7900EN datasheet

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 me7900en me7900en-g.pdf pdf_icon

ME7900EN

ME7900EN/ME7900EN-G N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7900EN is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 23m @VGS=4V trench technology . This high density process is especially tailored to RDS(ON) 25m @VGS=3.1V mini... See More ⇒

Detailed specifications: ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, AOD4184A, ME7900EN-G, ME7910D, ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH

Keywords - ME7900EN MOSFET specs

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