All MOSFET. ME7900EN-G Datasheet

 

ME7900EN-G Datasheet and Replacement


   Type Designator: ME7900EN-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 472 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3X3NEP
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ME7900EN-G Datasheet (PDF)

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ME7900EN-G

ME7900EN/ME7900EN-G N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7900EN is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON)23m@VGS=4V trench technology . This high density process is especially tailored to RDS(ON)25m@VGS=3.1V mini

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTB40P06J3 | F16F60CPM | MGSF1N02L | DMT6009LPS-13 | IXFH110N10P | RSE002P03TL | BSZ105N04NSG

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