All MOSFET. ME7900EN-G Datasheet

 

ME7900EN-G Datasheet and Replacement


   Type Designator: ME7900EN-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 472 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3X3NEP
 

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ME7900EN-G Datasheet (PDF)

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ME7900EN-G

ME7900EN/ME7900EN-G N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7900EN is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON)23m@VGS=4V trench technology . This high density process is especially tailored to RDS(ON)25m@VGS=3.1V mini

Datasheet: ME7810S-G , ME7820S-G , ME78241S-G , ME7845S , ME7845S-G , ME7890ED , ME7890ED-G , ME7900EN , AO4407A , ME7910D , ME7910D-G , ME8029 , ME8029-G , ME80N08AF , ME80N08AF-G , ME80N08AH , ME80N08AH-G .

History: MDP4N60TP

Keywords - ME7900EN-G MOSFET datasheet

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