All MOSFET. ME7910D Datasheet

 

ME7910D Datasheet and Replacement


   Type Designator: ME7910D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 10.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70.7 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3
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ME7910D Datasheet (PDF)

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ME7910D

ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7910D is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=4.5V power field effect transistors are produced using high cell density, RDS(ON)15m@VGS=4V DMOS trench technology. This high density process is especially RDS(ON)17.5m@VGS=3.1V tailored

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HM8N20K | SVF840MJ | SVS65R380FD4 | TPC8108 | IXFH110N10P | RSE002P03TL | ISL9N310AD3ST

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