All MOSFET. ME7910D Datasheet

 

ME7910D MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7910D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 10.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30.9 nC
   trⓘ - Rise Time: 70.7 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3

 ME7910D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7910D Datasheet (PDF)

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 me7910d me7910d-g.pdf

ME7910D ME7910D

ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7910D is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=4.5V power field effect transistors are produced using high cell density, RDS(ON)15m@VGS=4V DMOS trench technology. This high density process is especially RDS(ON)17.5m@VGS=3.1V tailored

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AON3820

 

 
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