ME7910D PDF and Equivalents Search

 

ME7910D Specs and Replacement

Type Designator: ME7910D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70.7 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN3X3

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ME7910D datasheet

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 me7910d me7910d-g.pdf pdf_icon

ME7910D

ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7910D is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=4.5V power field effect transistors are produced using high cell density, RDS(ON) 15m @VGS=4V DMOS trench technology. This high density process is especially RDS(ON) 17.5m @VGS=3.1V tailored ... See More ⇒

Detailed specifications: ME7820S-G, ME78241S-G, ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, 60N06, ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117

Keywords - ME7910D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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