ME8029 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME8029
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 137 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 937 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: SOP8
ME8029 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME8029 Datasheet (PDF)
..1. Size:991K matsuki electric
me8029 me8029-g.pdf
me8029 me8029-g.pdf
ME8029/ME8029-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)2.6m@VGS=10V The ME8029 is the N-Channel logic enhancement mode power RDS(ON)3.9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tai
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