All MOSFET. ME8029 Datasheet

 

ME8029 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME8029
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 137 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 937 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SOP8

 ME8029 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME8029 Datasheet (PDF)

 ..1. Size:991K  matsuki electric
 me8029 me8029-g.pdf

ME8029 ME8029

ME8029/ME8029-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)2.6m@VGS=10V The ME8029 is the N-Channel logic enhancement mode power RDS(ON)3.9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tai

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: VS3628DE-G | WMJ220N20HG3 | AS3423B | BUK9207-30B | IRLU024A | TK42E12N1 | NP15P04SLG

 

 
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