ME8029 Specs and Replacement
Type Designator: ME8029
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 937 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: SOP8
ME8029 substitution
- MOSFET ⓘ Cross-Reference Search
ME8029 datasheet
me8029 me8029-g.pdf
ME8029/ME8029-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 2.6m @VGS=10V The ME8029 is the N-Channel logic enhancement mode power RDS(ON) 3.9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tai... See More ⇒
Detailed specifications: ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G, AO4468, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, ME8117-G, ME8205B
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