All MOSFET. ME8029-G Datasheet

 

ME8029-G Datasheet and Replacement


   Type Designator: ME8029-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 937 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SOP8
 

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ME8029-G Datasheet (PDF)

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ME8029-G

ME8029/ME8029-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)2.6m@VGS=10V The ME8029 is the N-Channel logic enhancement mode power RDS(ON)3.9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tai

Datasheet: ME7845S-G , ME7890ED , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D , ME7910D-G , ME8029 , BS170 , ME80N08AF , ME80N08AF-G , ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G , ME8205B , ME8205B-G .

History: SVD2N60D | UPA1815GR | AP3A010AMT | 2N7002EM3T5G | SVGP104R5NASTR | RJK1526DPJ | FK8V03040L

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