ME8029-G PDF and Equivalents Search

 

ME8029-G Specs and Replacement

Type Designator: ME8029-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 937 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: SOP8

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ME8029-G datasheet

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 me8029 me8029-g.pdf pdf_icon

ME8029-G

ME8029/ME8029-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 2.6m @VGS=10V The ME8029 is the N-Channel logic enhancement mode power RDS(ON) 3.9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tai... See More ⇒

Detailed specifications: ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G, ME8029, IRF730, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, ME8117-G, ME8205B, ME8205B-G

Keywords - ME8029-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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