ME8117-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME8117-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 17.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 146 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: SOP8
ME8117-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME8117-G Datasheet (PDF)
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me8117 me8117-g.pdf
me8117 me8117-g.pdf
ME8117/ME8117-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8117 is the P-Channel logic enhancement mode power field RDS(ON)5.2m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)9.5m@VGS=-4V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O
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