All MOSFET. ME8117-G Datasheet

 

ME8117-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME8117-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 17.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 146 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: SOP8

 ME8117-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME8117-G Datasheet (PDF)

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 me8117 me8117-g.pdf

ME8117-G ME8117-G

ME8117/ME8117-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8117 is the P-Channel logic enhancement mode power field RDS(ON)5.2m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)9.5m@VGS=-4V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

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