ME8117-G MOSFET Datasheet: P-Ch, 30V, 17.3A. Full specification with pinout and replacement list

ME8117-G Specs and Replacement

Type Designator: ME8117-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: SOP8

ME8117-G substitution

- MOSFET ⓘ Cross-Reference Search

ME8117-G datasheet

..1. Size:1218K matsuki electric
me8117 me8117-g.pdf pdf_icon

ME8117/ME8117-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8117 is the P-Channel logic enhancement mode power field RDS(ON) 5.2m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 9.5m @VGS=-4V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O... See More ⇒

Detailed specifications: ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, IRF540N, ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, ME96N03-G, MEE2348