MEE7630-G MOSFET. Datasheet pdf. Equivalent
Type Designator: MEE7630-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 148 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75.6 nC
Rise Time (tr): 45.6 nS
Drain-Source Capacitance (Cd): 894 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: POWERDFN5X6
MEE7630-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEE7630-G Datasheet (PDF)
mee7630-g.pdf

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate
mee7636-g.pdf

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .



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