All MOSFET. MEE7630-G Datasheet

 

MEE7630-G Datasheet and Replacement


   Type Designator: MEE7630-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 148 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45.6 nS
   Cossⓘ - Output Capacitance: 894 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: POWERDFN5X6
      - MOSFET Cross-Reference Search

 

MEE7630-G Datasheet (PDF)

 ..1. Size:1519K  matsuki electric
 mee7630-g.pdf pdf_icon

MEE7630-G

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate

 8.1. Size:1359K  matsuki electric
 mee7636-g.pdf pdf_icon

MEE7630-G

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MXP4004BT | TPC8031-H | RZR040P01 | IXFN40N90P | SVG086R0NSTR | WMB025N06LG4 | IXTH27N40MB

Keywords - MEE7630-G MOSFET datasheet

 MEE7630-G cross reference
 MEE7630-G equivalent finder
 MEE7630-G lookup
 MEE7630-G substitution
 MEE7630-G replacement

 

 
Back to Top

 


 
.