MEE7630-G Datasheet. Specs and Replacement
Type Designator: MEE7630-G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 148 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45.6 nS
Cossⓘ - Output Capacitance: 894 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: POWERDFN5X6
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MEE7630-G substitution
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MEE7630-G datasheet
mee7630-g.pdf
Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON) 1.6m @VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON) 2.6m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate ... See More ⇒
mee7636-g.pdf
MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON) 2.5 m @VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON) 4.1m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and... See More ⇒
Detailed specifications: MEE4298HT, MEE4298K-G, MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, MEE7296-G, MEE7298-G, IRF1010E, MEE7636-G, MEE7816AS-G, MEE7816S-G, 2SK815, MDD2601, NCE1579C, SMP730, HCA60R040
Keywords - MEE7630-G MOSFET specs
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MEE7630-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
