All MOSFET. MEE7630-G Datasheet

 

MEE7630-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEE7630-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 148 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75.6 nC
   trⓘ - Rise Time: 45.6 nS
   Cossⓘ - Output Capacitance: 894 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: POWERDFN5X6

 MEE7630-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE7630-G Datasheet (PDF)

 ..1. Size:1519K  matsuki electric
mee7630-g.pdf

MEE7630-G
MEE7630-G

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate

 8.1. Size:1359K  matsuki electric
mee7636-g.pdf

MEE7630-G
MEE7630-G

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

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