All MOSFET. MEE7636-G Datasheet

 

MEE7636-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEE7636-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 56.8 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 119 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 25.9 nS
   Drain-Source Capacitance (Cd): 690 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
   Package: POWERDFN5X6

 MEE7636-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE7636-G Datasheet (PDF)

 ..1. Size:1359K  matsuki electric
mee7636-g.pdf

MEE7636-G
MEE7636-G

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

 8.1. Size:1519K  matsuki electric
mee7630-g.pdf

MEE7636-G
MEE7636-G

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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