All MOSFET. MEE7636-G Datasheet

 

MEE7636-G MOSFET. Datasheet pdf. Equivalent

Type Designator: MEE7636-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56.8 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 119 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 51.7 nC

Rise Time (tr): 25.9 nS

Drain-Source Capacitance (Cd): 690 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm

Package: POWERDFN5X6

MEE7636-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE7636-G Datasheet (PDF)

 ..1. Size:1359K  matsuki electric
 mee7636-g.pdf

MEE7636-G MEE7636-G

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

 8.1. Size:1519K  matsuki electric
 mee7630-g.pdf

MEE7636-G MEE7636-G

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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