MEE7636-G PDF Specs and Replacement
Type Designator: MEE7636-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 119 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.9 nS
Cossⓘ - Output Capacitance: 690 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: POWERDFN5X6
MEE7636-G substitution
MEE7636-G PDF Specs
mee7636-g.pdf
MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON) 2.5 m @VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON) 4.1m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and... See More ⇒
mee7630-g.pdf
Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON) 1.6m @VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON) 2.6m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate ... See More ⇒
Detailed specifications: MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , IRFB3607 , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 , HCA60R040 , MS5N100 .
Keywords - MEE7636-G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
