All MOSFET. MEE7636-G Datasheet

 

MEE7636-G Datasheet and Replacement


   Type Designator: MEE7636-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 119 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.9 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: POWERDFN5X6
 

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MEE7636-G Datasheet (PDF)

 ..1. Size:1359K  matsuki electric
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MEE7636-G

MEE7636-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7636-G is the N-Channel enhancement mode power RDS(ON)2.5 m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

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MEE7636-G

Preliminary MEE7630-G N-Channel 40-V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7630-G is the N-Channel enhancement mode power RDS(ON)1.6m@VGS=10Vfield effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)2.6m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Low Gate Chargeon-state resistance and gate

Datasheet: MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , AON7506 , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 , HCA60R040 , MS5N100 .

Keywords - MEE7636-G MOSFET datasheet

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