MEE7816S-G MOSFET. Datasheet pdf. Equivalent
Type Designator: MEE7816S-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 16.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 119 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN3X3
MEE7816S-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEE7816S-G Datasheet (PDF)
mee7816s-g.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistors, using Force-MOS patented Extended Trench Gate(ETG) Exceptional on-resistance and maximum DC current technology. This advanced t
mee7816s.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, EMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro
mee7816as-g.pdf
MEE7816AS-G Dual N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE7816AS-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N4392CSM | FCP9N60N
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