MEE7816S-G Datasheet and Replacement. Cross Reference Search

MEE7816S-G Datasheet (PDF)

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Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistors, using Force-MOS patented Extended Trench Gate(ETG) Exceptional on-resistance and maximum DC current technology. This advanced t

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Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, EMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro

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MEE7816AS-G Dual N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE7816AS-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology

Datasheet: MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , MEE7636-G , MEE7816AS-G , AO4407 , 2SK815 , MDD2601 , NCE1579C , SMP730 , HCA60R040 , MS5N100 , MS5N100S , MS5N100FT .