MEE7816S-G Specs and Replacement
Type Designator: MEE7816S-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 16.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 119 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN3X3
MEE7816S-G substitution
MEE7816S-G Specs
mee7816s-g.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816S is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistors, using Force-MOS patented Extended Trench Gate(ETG) Exceptional on-resistance and maximum DC current technology. This advanced t... See More ⇒
mee7816s.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816S is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, EMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro... See More ⇒
mee7816as-g.pdf
MEE7816AS-G Dual N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816AS-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistor, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC current Gate(ETG) technology. This advanced technology ... See More ⇒
Detailed specifications: MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , MEE7636-G , MEE7816AS-G , IRF530 , 2SK815 , MDD2601 , NCE1579C , SMP730 , HCA60R040 , MS5N100 , MS5N100S , MS5N100FT .
Keywords - MEE7816S-G MOSFET specs
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