All MOSFET. SMP730 Datasheet

 

SMP730 Datasheet and Replacement


   Type Designator: SMP730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220

 SMP730 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMP730 Datasheet (PDF)

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SMP730

SMP730 400V N-Channel Power MOSFET Features 6A,400V, RDS(on) =1.0 @VGS=10V Low gate charge ( typical 13 nC) Low Crss ( typical 7pF) 100% avalanche tested Fast switching Improved dv/dt capability Application Electronic Ballast Active power factor correction Switching mode power supply Absolute Maximum Ratings(Tc=25C unless otherwise not

Datasheet: MEE7298-G , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , STP80NF70 , HCA60R040 , MS5N100 , MS5N100S , MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 .

History: SHD225409

Keywords - SMP730 MOSFET datasheet

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