SMP730 Datasheet and Replacement
Type Designator: SMP730
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
SMP730 substitution
SMP730 Datasheet (PDF)
smp730.pdf

SMP730 400V N-Channel Power MOSFET Features 6A,400V, RDS(on) =1.0 @VGS=10V Low gate charge ( typical 13 nC) Low Crss ( typical 7pF) 100% avalanche tested Fast switching Improved dv/dt capability Application Electronic Ballast Active power factor correction Switching mode power supply Absolute Maximum Ratings(Tc=25C unless otherwise not
Datasheet: MEE7298-G , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , 20N50 , HCA60R040 , MS5N100 , MS5N100S , MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 .
History: SI5445BDC | RF4E110GN | STB22NM60N | RF1S50N06SM | MTC380Q8 | SSD40N03 | MTDA4N20J3
Keywords - SMP730 MOSFET datasheet
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History: SI5445BDC | RF4E110GN | STB22NM60N | RF1S50N06SM | MTC380Q8 | SSD40N03 | MTDA4N20J3



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