All MOSFET. HCA60R040 Datasheet

 

HCA60R040 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCA60R040
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 68.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 186 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247

 HCA60R040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCA60R040 Datasheet (PDF)

 ..1. Size:1113K  1
 hca60r040.pdf

HCA60R040 HCA60R040

 8.1. Size:281K  1
 hca60r150t.pdf

HCA60R040 HCA60R040

Jan 2016HCA60R150T600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) XQg)BVDSS @Tj,max 650 V Extremely low switching lossID 22 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche TestedQg, Typ 41 nCApplicationPackage & Internal Circuit Switch Mode Power Supply (SMPS)TO-247 Uninterruptib

 8.2. Size:406K  semihow
 hca60r290.pdf

HCA60R040 HCA60R040

Dec 2020HCA60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 12.9 A Excellent stability and uniformityRDS(on), max 0.29 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swit

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFB3207 | AP4501GM-HF | AP9970GI-HF | AG5N60S | SDD01N70

 

 
Back to Top