MS5N100 Datasheet. Specs and Replacement

Type Designator: MS5N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO3PH

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MS5N100 datasheet

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MS5N100

MS5N100/S/FT/FE/FD N-channel 1000V 3.5 - 5A General features Type V R I DSS(@Tjmax) DS(on) D MS5N100 1000 V ... See More ⇒

Detailed specifications: MEE7636-G, MEE7816AS-G, MEE7816S-G, 2SK815, MDD2601, NCE1579C, SMP730, HCA60R040, TK10A60D, MS5N100S, MS5N100FT, MS5N100FE, MS5N100FD, SJMN600R70F, HCA60R290, HCA65R165, HCA70R180

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