HCA65R165 Specs and Replacement
Type Designator: HCA65R165
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO247
HCA65R165 substitution
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HCA65R165 datasheet
hca65r165.pdf
Dec 2019 HCA65R165 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 20.4 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-247 SYMBOL Swi... See More ⇒
Detailed specifications: HCA60R040, MS5N100, MS5N100S, MS5N100FT, MS5N100FE, MS5N100FD, SJMN600R70F, HCA60R290, 10N65, HCA70R180, HCA90R300, HCA90R450, HCA90R800, HCD60R260, HCD60R490, HCD60R750, HCD60R900
Keywords - HCA65R165 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: JCS24N50WH | SFG10S10PF | IRF7304QPBF | SML30B40 | SWB065R68E7T | SML30J70 | BM3416E
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