All MOSFET. HCA65R165 Datasheet

 

HCA65R165 Datasheet and Replacement


   Type Designator: HCA65R165
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO247
 

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HCA65R165 Datasheet (PDF)

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HCA65R165

Dec 2019HCA65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swi

Datasheet: HCA60R040 , MS5N100 , MS5N100S , MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 , 75N75 , HCA70R180 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 .

History: AO8807 | KP509A9 | CJBA3541K | BUK454-200B | DMNH6042SK3 | HN1K06FU | 2SK930

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