All MOSFET. HCA70R180 Datasheet

 

HCA70R180 Datasheet and Replacement


   Type Designator: HCA70R180
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247
 

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HCA70R180 Datasheet (PDF)

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HCA70R180

Dec 2019HCA70R180700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 19.5 A Excellent stability and uniformityRDS(on), max 0.18 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swit

Datasheet: MS5N100 , MS5N100S , MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 , HCA65R165 , 13N50 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 .

History: IXFH60N60X2A | KHB019N20F2 | NCEP02T10T | SWD078R08E8T | WMC1N40D1 | 2SK3024-Z | STL100N6LF6

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