HCD70R910 PDF and Equivalents Search

 

HCD70R910 Specs and Replacement

Type Designator: HCD70R910

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.91 Ohm

Package: DPAK

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HCD70R910 datasheet

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 hcd70r910.pdf pdf_icon

HCD70R910

March 2020 HCD70R910 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 5.2 A Excellent stability and uniformity RDS(on), max 0.91 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Sw... See More ⇒

Detailed specifications: HCD60R260, HCD60R490, HCD60R750, HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, HCD65R830, P60NF06, HCD80R1K2, HCD80R1K4, HCD90R1K0, HCD90R1K6, HCD90R450, HCD90R800, HCF65R320, HCF65R550

Keywords - HCD70R910 MOSFET specs

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