All MOSFET. HCD70R910 Datasheet

 

HCD70R910 Datasheet and Replacement


   Type Designator: HCD70R910
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.91 Ohm
   Package: DPAK
 

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HCD70R910 Datasheet (PDF)

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HCD70R910

March 2020HCD70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Sw

Datasheet: HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , AO3401 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 .

History: AMA461P | IRFS630B | SML10026DFN

Keywords - HCD70R910 MOSFET datasheet

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