HCF65R320 MOSFET Datasheet: N-Ch, 650V, 11.2A. Full specification with pinout and replacement list

HCF65R320 Specs and Replacement

Type Designator: HCF65R320

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: 8DFN5X6

HCF65R320 substitution

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HCF65R320 datasheet

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April 2020 HCF65R320 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 11.2 A Excellent stability and uniformity RDS(on), max 0.35 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit 8DFN 5x6 SYMBOL ... See More ⇒

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April 2020 HCF65R550 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 6.9 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit 8DFN 5x6 SYMBOL Sw... See More ⇒

Detailed specifications: HCD65R830, HCD70R910, HCD80R1K2, HCD80R1K4, HCD90R1K0, HCD90R1K6, HCD90R450, HCD90R800, IRFZ48N, HCF65R550, HCF70R360, HCF70R600, HCF70R910, HCFL60R115, HCFL60R150, HCFL60R190, HCFL60R290