All MOSFET. HCF65R320 Datasheet

 

HCF65R320 Datasheet and Replacement


   Type Designator: HCF65R320
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: 8DFN5X6
 

 HCF65R320 substitution

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HCF65R320 Datasheet (PDF)

 ..1. Size:435K  semihow
 hcf65r320.pdf pdf_icon

HCF65R320

April 2020HCF65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 11.2 A Excellent stability and uniformityRDS(on), max 0.35 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL

 8.1. Size:454K  semihow
 hcf65r550.pdf pdf_icon

HCF65R320

April 2020HCF65R550650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 6.9 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL Sw

Datasheet: HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , 60N06 , HCF65R550 , HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 .

History: NTD85N02RT4 | KQS4901 | NTTFS3A08PZ | MF5853CS | KRF1302S | SIR626DP | AMS4210

Keywords - HCF65R320 MOSFET datasheet

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