HCF70R600 Datasheet and Replacement
Type Designator: HCF70R600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: 8DFN5X6
HCF70R600 substitution
HCF70R600 Datasheet (PDF)
hcf70r600.pdf

April 2020HCF70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.65 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL S
hcf70r360.pdf

April 2020HCF70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.39 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL
hcf70r910.pdf

April 2020HCF70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 4.9 A Excellent stability and uniformityRDS(on), max 0.96 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL
Datasheet: HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , 60N06 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 .
History: CS38N30AN | SSFN3317 | 5N60G-TA3-T | STS3417
Keywords - HCF70R600 MOSFET datasheet
HCF70R600 cross reference
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HCF70R600 substitution
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History: CS38N30AN | SSFN3317 | 5N60G-TA3-T | STS3417



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