All MOSFET. HCFL60R290 Datasheet

 

HCFL60R290 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCFL60R290
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: DFN8X8

 HCFL60R290 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCFL60R290 Datasheet (PDF)

 ..1. Size:413K  semihow
 hcfl60r290.pdf

HCFL60R290 HCFL60R290

May 2020HCFL60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 13.1 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:433K  semihow
 hcfl60r150.pdf

HCFL60R290 HCFL60R290

May 2020HCFL60R150600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.7 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Sw

 7.2. Size:434K  semihow
 hcfl60r115.pdf

HCFL60R290 HCFL60R290

May 2020HCFL60R115600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 26.9 A Excellent stability and uniformityRDS(on), max 127 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.3. Size:433K  semihow
 hcfl60r350.pdf

HCFL60R290 HCFL60R290

May 2020HCFL60R350600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 11.1 A Excellent stability and uniformityRDS(on), max 0.385 100% Avalanche Tested Built-in ESD DiodeQg, Typ 22.6 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL

 7.4. Size:433K  semihow
 hcfl60r190.pdf

HCFL60R290 HCFL60R290

May 2020HCFL60R190600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 17.9 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KIA2300

 

 
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