HCFL60R290 - аналоги, параметры транзистора - Справочник транзисторов

HCFL60R290 даташит

..1. Size:413K semihow
hcfl60r290.pdf pdf_icon

May 2020 HCFL60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 13.1 A Excellent stability and uniformity RDS(on), max 0.32 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

7.1. Size:433K semihow
hcfl60r150.pdf pdf_icon

May 2020 HCFL60R150 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 21.7 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit DFN8x8 SYMBOL Sw

7.2. Size:434K semihow
hcfl60r115.pdf pdf_icon

May 2020 HCFL60R115 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 26.9 A Excellent stability and uniformity RDS(on), max 127 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

7.3. Size:433K semihow
hcfl60r350.pdf pdf_icon

May 2020 HCFL60R350 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 11.1 A Excellent stability and uniformity RDS(on), max 0.385 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL