HCFL80R250 PDF and Equivalents Search

 

HCFL80R250 Specs and Replacement

Type Designator: HCFL80R250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.275 Ohm

Package: DFN8X8

HCFL80R250 substitution

- MOSFET ⓘ Cross-Reference Search

 

HCFL80R250 datasheet

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 hcfl80r250.pdf pdf_icon

HCFL80R250

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 hcfl80r380.pdf pdf_icon

HCFL80R250

June 2021 HCFL80R380 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 13 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit... See More ⇒

Detailed specifications: HCFL60R290, HCFL60R350, HCFL65R130, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, HCFL70R360, IRF730, HCFL80R380, HCI60R150, HCI70R230, HCI70R360, HCI70R600, HCP60R099, HCP65R110, HCP65R130

Keywords - HCFL80R250 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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