All MOSFET. HCFL80R250 Datasheet

 

HCFL80R250 Datasheet and Replacement


   Type Designator: HCFL80R250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.275 Ohm
   Package: DFN8X8
 

 HCFL80R250 substitution

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HCFL80R250 Datasheet (PDF)

 ..1. Size:485K  semihow
 hcfl80r250.pdf pdf_icon

HCFL80R250

June 2021HCFL80R250_Green800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 18 A Excellent stability and uniformityRDS(on), max 0.275 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL

 7.1. Size:484K  semihow
 hcfl80r380.pdf pdf_icon

HCFL80R250

June 2021HCFL80R380800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 13 A Excellent stability and uniformityRDS(on), max 0.42 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swit

Datasheet: HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 , HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , BS170 , HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 .

History: NP32N055IHE | SUP18N15-95 | IXTH6N100D2 | IXTH6N120 | IRLH5036 | SIHFI540G | HMS28N65

Keywords - HCFL80R250 MOSFET datasheet

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