HCI60R150 PDF and Equivalents Search

 

HCI60R150 Specs and Replacement

Type Designator: HCI60R150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO262

HCI60R150 substitution

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HCI60R150 datasheet

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 hci60r150.pdf pdf_icon

HCI60R150

Dec 2019 HCI60R150 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 21.4 A Excellent stability and uniformity RDS(on), max 0.15 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-262 SYMBOL Swit... See More ⇒

Detailed specifications: HCFL65R130, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, HCFL70R360, HCFL80R250, HCFL80R380, IRF3205, HCI70R230, HCI70R360, HCI70R600, HCP60R099, HCP65R110, HCP65R130, HCP65R165, HCP65R210

Keywords - HCI60R150 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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