All MOSFET. HCT80R850 Datasheet

 

HCT80R850 Datasheet and Replacement


   Type Designator: HCT80R850
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.7 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 14.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT223
 

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HCT80R850 Datasheet (PDF)

 ..1. Size:408K  semihow
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HCT80R850

August 2020HCT80R850 800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 6.6 A Excellent stability and uniformityRDS(on), max 0.85 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplication Package & Internal Circuit Switch Mode Pow

 9.1. Size:232K  optek
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HCT80R850

Product Bulletin HCT802September 1996Dual Enhancement Mode MOSFETTypes HCT802, HCT802TX, HCT802TXVFeatures Absolute Maximum Ratings6 pad surface mount package Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 VVDS = 90VGate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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