HCT80R850 Datasheet. Specs and Replacement

Type Designator: HCT80R850  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 14.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT223

HCT80R850 substitution

- MOSFET ⓘ Cross-Reference Search

 

HCT80R850 datasheet

 ..1. Size:408K  semihow
 hct80r850.pdf pdf_icon

HCT80R850

August 2020 HCT80R850 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 6.6 A Excellent stability and uniformity RDS(on), max 0.85 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit Switch Mode Pow... See More ⇒

 9.1. Size:232K  optek
 hct802.pdf pdf_icon

HCT80R850

Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings 6 pad surface mount package Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V VDS = 90V Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

Detailed specifications: HCS80R1K4ST, HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, SKD502T, HCT90R1K4, HCU60R260, HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, HCU70R710

Keywords - HCT80R850 MOSFET specs

 HCT80R850 cross reference

 HCT80R850 equivalent finder

 HCT80R850 pdf lookup

 HCT80R850 substitution

 HCT80R850 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs