All MOSFET. HCT80R850 Datasheet

 

HCT80R850 Datasheet and Replacement


   Type Designator: HCT80R850
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 14.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT223
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HCT80R850 Datasheet (PDF)

 ..1. Size:408K  semihow
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HCT80R850

August 2020HCT80R850 800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 6.6 A Excellent stability and uniformityRDS(on), max 0.85 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplication Package & Internal Circuit Switch Mode Pow

 9.1. Size:232K  optek
 hct802.pdf pdf_icon

HCT80R850

Product Bulletin HCT802September 1996Dual Enhancement Mode MOSFETTypes HCT802, HCT802TX, HCT802TXVFeatures Absolute Maximum Ratings6 pad surface mount package Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 VVDS = 90VGate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

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