All MOSFET. HCT90R1K4 Datasheet

 

HCT90R1K4 Datasheet and Replacement


   Type Designator: HCT90R1K4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT223
 

 HCT90R1K4 substitution

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HCT90R1K4 Datasheet (PDF)

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HCT90R1K4

Dec 2019HCT90R1K4 900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 4.2 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplication Package & Internal Circuit Switch Mode Power S

Datasheet: HCS90R1K0S , HCS90R1K6S , HCS90R300S , HCS90R450S , HCS90R800S , HCT70R1K1 , HCT70R910 , HCT80R850 , IRFB3607 , HCU60R260 , HCU60R580 , HCU65R1K0 , HCU65R450 , HCU70R360 , HCU70R600 , HCU70R710 , HCU70R910 .

History: MSU1N60U | FMC13N60ES | FMC16N50ES

Keywords - HCT90R1K4 MOSFET datasheet

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