HCT90R1K4 Datasheet. Specs and Replacement

Type Designator: HCT90R1K4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT223

HCT90R1K4 substitution

- MOSFET ⓘ Cross-Reference Search

 

HCT90R1K4 datasheet

 ..1. Size:361K  semihow
 hct90r1k4.pdf pdf_icon

HCT90R1K4

Dec 2019 HCT90R1K4 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 4.2 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit Switch Mode Power S... See More ⇒

Detailed specifications: HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, K4145, HCU60R260, HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, HCU70R710, HCU70R910

Keywords - HCT90R1K4 MOSFET specs

 HCT90R1K4 cross reference

 HCT90R1K4 equivalent finder

 HCT90R1K4 pdf lookup

 HCT90R1K4 substitution

 HCT90R1K4 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility