HCT90R1K4 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCT90R1K4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.3 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT223
HCT90R1K4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCT90R1K4 Datasheet (PDF)
..1. Size:361K semihow
hct90r1k4.pdf
hct90r1k4.pdf
Dec 2019HCT90R1K4 900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 4.2 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplication Package & Internal Circuit Switch Mode Power S
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