All MOSFET. HCU60R580 Datasheet

 

HCU60R580 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCU60R580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: IPAK

 HCU60R580 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCU60R580 Datasheet (PDF)

 ..1. Size:411K  semihow
hcu60r580.pdf

HCU60R580 HCU60R580

March 2021HCU60R580600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 7.0 A Excellent stability and uniformityRDS(on), max 0.58 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

 8.1. Size:413K  semihow
hcu60r260.pdf

HCU60R580 HCU60R580

Sep 2020HCU60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 5N65KL-TM3-T

 

 
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