All MOSFET. HCU60R580 Datasheet

 

HCU60R580 Datasheet and Replacement


   Type Designator: HCU60R580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: IPAK
 

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HCU60R580 Datasheet (PDF)

 ..1. Size:411K  semihow
 hcu60r580.pdf pdf_icon

HCU60R580

March 2021HCU60R580600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 7.0 A Excellent stability and uniformityRDS(on), max 0.58 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

 8.1. Size:413K  semihow
 hcu60r260.pdf pdf_icon

HCU60R580

Sep 2020HCU60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switc

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History: SVT033R5NAT

Keywords - HCU60R580 MOSFET datasheet

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