HCU60R580 Datasheet. Specs and Replacement

Type Designator: HCU60R580  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: IPAK

HCU60R580 substitution

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HCU60R580 datasheet

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 hcu60r580.pdf pdf_icon

HCU60R580

March 2021 HCU60R580 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 7.0 A Excellent stability and uniformity RDS(on), max 0.58 100% Avalanche Tested Built-in ESD Diode Qg, Typ 14 nC Application Package & Internal Circuit I-PAK SYMBOL Swit... See More ⇒

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 hcu60r260.pdf pdf_icon

HCU60R580

Sep 2020 HCU60R260 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 14.4 A Excellent stability and uniformity RDS(on), max 0.26 100% Avalanche Tested Built-in ESD Diode Qg, Typ 31 nC Application Package & Internal Circuit I-PAK SYMBOL Switc... See More ⇒

Detailed specifications: HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4, HCU60R260, AON7410, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, HCU70R710, HCU70R910, HCU80R1K2, HCU80R1K4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.