All MOSFET. HCU90R1K4 Datasheet

 

HCU90R1K4 Datasheet and Replacement


   Type Designator: HCU90R1K4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: IPAK
 

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HCU90R1K4 Datasheet (PDF)

 ..1. Size:410K  semihow
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HCU90R1K4

Nov 2021HCU90R1K4900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 4.2 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switc

 6.1. Size:442K  semihow
 hcu90r1k0.pdf pdf_icon

HCU90R1K4

Apr. 2023HCU90R1K0900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

Datasheet: HCU65R450 , HCU70R360 , HCU70R600 , HCU70R710 , HCU70R910 , HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , 20N50 , HCW60R150 , HCW60R190 , HCW60R290 , HCW65R210 , HCW65R320 , HFA20N50U , HFA24N50G , HFB1N60F .

History: 3415

Keywords - HCU90R1K4 MOSFET datasheet

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