HCU90R1K4 Datasheet. Specs and Replacement

Type Designator: HCU90R1K4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: IPAK

HCU90R1K4 substitution

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HCU90R1K4 datasheet

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 hcu90r1k4.pdf pdf_icon

HCU90R1K4

Nov 2021 HCU90R1K4 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 4.2 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit I-PAK SYMBOL Switc... See More ⇒

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 hcu90r1k0.pdf pdf_icon

HCU90R1K4

Apr. 2023 HCU90R1K0 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit I-PAK SYMBOL Swit... See More ⇒

Detailed specifications: HCU65R450, HCU70R360, HCU70R600, HCU70R710, HCU70R910, HCU80R1K2, HCU80R1K4, HCU90R1K0, STP80NF70, HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, HFA20N50U, HFA24N50G, HFB1N60F

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