HCW60R190 Datasheet. Specs and Replacement
Type Designator: HCW60R190 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO263
HCW60R190 substitution
- MOSFET ⓘ Cross-Reference Search
HCW60R190 datasheet
hcw60r190.pdf
Dec 2019 HCW60R190 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 17.6 A Excellent stability and uniformity RDS(on), max 0.19 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-263 SYMBOL Swit... See More ⇒
hcw60r150.pdf
Dec 2019 HCW60R150 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 21.4 A Excellent stability and uniformity RDS(on), max 0.15 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-263 SYMBOL Swit... See More ⇒
hcw60r290.pdf
Dec 2019 HCW60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 12.9 A Excellent stability and uniformity RDS(on), max 0.29 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit TO-263 SYMBOL Swit... See More ⇒
Detailed specifications: HCU70R600, HCU70R710, HCU70R910, HCU80R1K2, HCU80R1K4, HCU90R1K0, HCU90R1K4, HCW60R150, TK10A60D, HCW60R290, HCW65R210, HCW65R320, HFA20N50U, HFA24N50G, HFB1N60F, HFC2N60U, HFD1N60F
Keywords - HCW60R190 MOSFET specs
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