All MOSFET. HCW65R210 Datasheet

 

HCW65R210 Datasheet and Replacement


   Type Designator: HCW65R210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 16.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO263
 

 HCW65R210 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HCW65R210 Datasheet (PDF)

 ..1. Size:646K  semihow
 hcw65r210.pdf pdf_icon

HCW65R210

Nov 2020HCW65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit

 8.1. Size:626K  semihow
 hcw65r320.pdf pdf_icon

HCW65R210

Nov 2020HCW65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 12.3 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - HCW65R210 MOSFET datasheet

 HCW65R210 cross reference
 HCW65R210 equivalent finder
 HCW65R210 lookup
 HCW65R210 substitution
 HCW65R210 replacement

 

 
Back to Top

 


 
.