HCW65R210 Datasheet. Specs and Replacement

Type Designator: HCW65R210  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO263

HCW65R210 substitution

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HCW65R210 datasheet

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 hcw65r210.pdf pdf_icon

HCW65R210

Nov 2020 HCW65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 16.8 A Excellent stability and uniformity RDS(on), max 0.21 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-263 SYMBOL Swit... See More ⇒

 8.1. Size:626K  semihow
 hcw65r320.pdf pdf_icon

HCW65R210

Nov 2020 HCW65R320 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 12.3 A Excellent stability and uniformity RDS(on), max 0.32 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit TO-263 SYMBOL Swit... See More ⇒

Detailed specifications: HCU70R910, HCU80R1K2, HCU80R1K4, HCU90R1K0, HCU90R1K4, HCW60R150, HCW60R190, HCW60R290, BS170, HCW65R320, HFA20N50U, HFA24N50G, HFB1N60F, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F

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