HFH9N90A Datasheet. Specs and Replacement

Type Designator: HFH9N90A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 52 nC

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

HFH9N90A substitution

- MOSFET ⓘ Cross-Reference Search

 

HFH9N90A datasheet

 ..1. Size:868K  semihow
 hfh9n90a.pdf pdf_icon

HFH9N90A

... See More ⇒

 7.1. Size:681K  shantou-huashan
 hfh9n90.pdf pdf_icon

HFH9N90A

Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance... See More ⇒

Detailed specifications: HFA24N50G, HFB1N60F, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, 20N50, HFI50N06A, HFI5N50S, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F

Keywords - HFH9N90A MOSFET specs

 HFH9N90A cross reference

 HFH9N90A equivalent finder

 HFH9N90A pdf lookup

 HFH9N90A substitution

 HFH9N90A replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs