HFH9N90A MOSFET. Datasheet pdf. Equivalent
Type Designator: HFH9N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
HFH9N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFH9N90A Datasheet (PDF)
hfh9n90a.pdf
Jul 2023BVDSS = 900 VRDS(on) Typ = 1.4 HFH9N90AID = 9.0 A900V N-Channel MOSFETTO-3PFEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area
hfh9n90.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance
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