All MOSFET. HFH9N90A Datasheet

 

HFH9N90A Datasheet and Replacement


   Type Designator: HFH9N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

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HFH9N90A Datasheet (PDF)

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HFH9N90A

Jul 2023BVDSS = 900 VRDS(on) Typ = 1.4 HFH9N90AID = 9.0 A900V N-Channel MOSFETTO-3PFEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area

 7.1. Size:681K  shantou-huashan
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HFH9N90A

Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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