All MOSFET. HFI5N60S Datasheet

 

HFI5N60S Datasheet and Replacement


   Type Designator: HFI5N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.5 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: I2PAK
 

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HFI5N60S Datasheet (PDF)

 ..1. Size:175K  semihow
 hfw5n60s hfi5n60s.pdf pdf_icon

HFI5N60S

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 9.1. Size:204K  semihow
 hfw5n50s hfi5n50s.pdf pdf_icon

HFI5N60S

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

Datasheet: HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A , HFI50N06A , HFI5N50S , IRF2807 , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A .

History: IRFU9024 | BUZ64 | HUF76105SK8

Keywords - HFI5N60S MOSFET datasheet

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