HFP730F Datasheet. Specs and Replacement

Type Designator: HFP730F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 13 nC

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

HFP730F substitution

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HFP730F datasheet

 ..1. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFP730F

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth... See More ⇒

 8.1. Size:340K  shantou-huashan
 hfp730.pdf pdf_icon

HFP730F

Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3... See More ⇒

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 hfp730u.pdf pdf_icon

HFP730F

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFP730U ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

 8.3. Size:299K  semihow
 hfp730s.pdf pdf_icon

HFP730F

Nov 2013 BVDSS = 400 V RDS(on) typ HFP730S ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

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Detailed specifications: HFH9N90A, HFI50N06A, HFI5N50S, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, 75N75, HFP830F, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS

Keywords - HFP730F MOSFET specs

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