HFP730F - параметры транзистора MOSFET, его аналоги, datasheet

HFP730F Datasheet (PDF)

..1. Size:404K semihow
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Dec 2016HFP730F / HFS730F400V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 400 V Very Low Intrinsic CapacitancesID 6A Excellent Switching CharacteristicsRDS(on), Typ 0.8 100% Avalanche TestedQg, Typ 13 nC RoHS CompliantHFP730F HFS730FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unless oth

8.1. Size:340K shantou-huashan
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Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3

8.2. Size:202K semihow
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Oct 2013BVDSS = 400 VRDS(on) typ = 0.75 HFP730U ID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lowe

8.3. Size:299K semihow
hfp730s.pdf pdf_icon

Nov 2013BVDSS = 400 VRDS(on) typ HFP730SID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lowe

Другие MOSFET... HFH9N90A , HFI50N06A , HFI5N50S , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , IRF520 , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS .