HFS18N50UT Datasheet. Specs and Replacement

Type Designator: HFS18N50UT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: TO220FT

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HFS18N50UT datasheet

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HFS18N50UT

June 2020 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50UT ID = 18 A 500V N-Channel MOSFET TO-220FT FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒

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HFS18N50UT

Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50U ID = 18 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Detailed specifications: HFP50N06A, HFP5N60F, HFP730F, HFP830F, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, IRFZ24N, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS

Keywords - HFS18N50UT MOSFET specs

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