All MOSFET. HFS18N50UT Datasheet

 

HFS18N50UT Datasheet and Replacement


   Type Designator: HFS18N50UT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO220FT
 

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HFS18N50UT Datasheet (PDF)

 ..1. Size:834K  semihow
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HFS18N50UT

June 2020BVDSS = 500 VRDS(on) typ = 0.22 HFS18N50UT ID = 18 A500V N-Channel MOSFETTO-220FTFEATURESOriginative New DesignSuperior Avalanche Rugged Technology123Robust Gate Oxide Technology 1.Gate 2. Drain 3. SourceVery Low Intrinsic CapacitancesExcellent Switching CharacteristicsUnrivalled Gate Charge : 58 nC (Typ.)Extended Safe Operating AreaLower RDS(ON)

 5.1. Size:149K  semihow
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HFS18N50UT

Apr 2014BVDSS = 500 VRDS(on) typ = 0.22 HFS18N50U ID = 18 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area L

Datasheet: HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , RU7088R , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS .

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