HFS18N50UT MOSFET Datasheet: N-Ch, 500V, 18A. Full specification with pinout and replacement list

HFS18N50UT Specs and Replacement

   Type Designator: HFS18N50UT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO220FT

HFS18N50UT substitution

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HFS18N50UT datasheet

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June 2020 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50UT ID = 18 A 500V N-Channel MOSFET TO-220FT FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒

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Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50U ID = 18 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Detailed specifications: HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , IRFZ48N , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS .