HFS3N80A Datasheet. Specs and Replacement

Type Designator: HFS3N80A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 20 nC

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO220F

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HFS3N80A datasheet

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 hfs3n80a.pdf pdf_icon

HFS3N80A

July 2022 BVDSS = 800 V RDS(on) Typ = 3.5 HFS3N80A ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 20 nC (Typ.) Extended Safe Opera... See More ⇒

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HFS3N80A

Dec 2005 BVDSS = 800 V RDS(on) typ HFS3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Detailed specifications: HFP830F, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, IRLB3034, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S

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