All MOSFET. HFS50N06A Datasheet

 

HFS50N06A Datasheet and Replacement


   Type Designator: HFS50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220F
 

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HFS50N06A Datasheet (PDF)

 ..1. Size:368K  semihow
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HFS50N06A

Oct 2016HFP50N06A / HFS50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFP50N06A HFS50N06ASymbolTO-220 TO-220FSS

 6.1. Size:227K  semihow
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HFS50N06A

July 2005BVDSS = 60 VRDS(on) = 18 mHFS50N06ID = 50 A60V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

Datasheet: HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , EMB04N03H , HFS5N60F , HFS5N65JS , HFS5N65SA , HFS730F , HFS730S , HFS7N80A , HFS830F , HFS8N60UA .

History: BL8N60-P | 2SJ598

Keywords - HFS50N06A MOSFET datasheet

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