All MOSFET. HFS50N06A Datasheet

 

HFS50N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFS50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220F

 HFS50N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS50N06A Datasheet (PDF)

 ..1. Size:368K  semihow
 hfp50n06a hfs50n06a.pdf

HFS50N06A HFS50N06A

Oct 2016HFP50N06A / HFS50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFP50N06A HFS50N06ASymbolTO-220 TO-220FSS

 6.1. Size:227K  semihow
 hfs50n06.pdf

HFS50N06A HFS50N06A

July 2005BVDSS = 60 VRDS(on) = 18 mHFS50N06ID = 50 A60V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

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History: IRFL110PBF | FDB8441F085

 

 
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